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DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Next Data Sheet Bulletin I25176/A
ST203C..C SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
370A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz I 2t @ 50Hz @ 60Hz V DRM /V RRM tq range TJ
ST203C..C
370 55 700 25 5260 5510 138 126 1000 to 1200 20 to 30 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
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ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
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V DRM /V RRM , maximum repetitive peak voltage V
VRSM , maximum non-repetitive peak voltage V
1100 1300
I DRM /I RRM max.
@ TJ = TJ max.
mA
40
ST203C..C
10 12
1000 1200
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit 860 840 700 430 50 V DRM 50 40
ITM 180oel 750 706 580 340 50 50 55 1340 1400 1350 980 50 V DRM 40
ITM 100s 1160 1220 1170 830 50 55 5620 2940 1750 910 50 V DRM 40
ITM
Units
5020 2590 1520 780 50 55 V A/s C A
47 / 0.22F
47 / 0.22F
47 / 0.22F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Heatsink temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST203C..C
370 (140) 55 (85) 700 5260 5510 4420 4630
Units Conditions
A C 180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I2t
Maximum I2t for fusing
138 126 98 89
I 2 t
Maximum I2t for fusing
1380
t = 0.1 to 10ms, no voltage reapplied
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Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
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Fig. 8 - Maximum Non-repetitive Surge Current
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Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 13 - Frequency Characteristics
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Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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Fig. 17 - Gate Characteristics
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On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current 0.92
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ST203C..C Units
1.72 1.17 1.22 V
Conditions
ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold
m 0.83 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G= 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Min 20
ST203C..C Units
1000 0.8 Max 30 s A/s
Conditions
TJ = TJ max., VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST203C..C Units
500 40 V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST203C..C Units
60 10 10 20 V W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
TJ = TJ max, tp 5ms
5 200 3 20 0.25 mA TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max., rated VDRM applied
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ST203C..C Series
Parameter
TJ Tstg
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Thermal and Mechanical Specification
ST203C..C
-40 to 125 -40 to 150 0.17 0.08 0.033 0.017 4900 (500) wt Approximate weight Case style 50 TO - 200AB (A-PUK) K/W C DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled
Units Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
K/W N (Kg) g
See Outline Table
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side 0.015 0.018 0.024 0.035 0.060 0.017 0.019 0.024 0.035 0.060 Single Side Double Side 0.011 0.019 0.026 0.036 0.060 0.011 0.019 0.026 0.037 0.061
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
20
2
3
3
C
4
12
5
C
6
H
7
H
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection) dv/dt - tq combinations available
dv/dt (V/s) 20 20 CK tq (s) 25 CJ 30 CH 50 DK DJ DH 100 EK EJ EH 200 -FJ * FH 400 --HH
*Standard part number.
All other types available only on request.
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Outline Table
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ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) DIA. MAX. 0.3 (0.01) MIN.
13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) DIA. MAX. 38 (1.50) DIA MAX. GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19)
25 5
42 (1.65) MAX. 28 (1.10)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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